1 transistor 2sA1309A silicon pnp epitaxial planer type for low-frequency amplification complementary to 2sc3311a n features l high foward current transfer ratio h fe . l allowing supply with the radial taping. l optimum for high-density mounting. n absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature 1:emitter 2:collector eiaj:scC72 3:base new s type package 4.0 0.2 marking 2.54 0.15 1.27 1.27 3.0 0.2 15.6 0.5 2.0 0.2 0.7 0.1 0.45 0.1 123 +0.2 symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings C60 C50 C7 C200 C100 300 150 C55 ~ +150 unit v v v ma ma mw ?c ?c n electrical characteristics (ta=25?c) parameter collector cutoff current collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage transition frequency collector output capacitance symbol i cbo i ceo v cbo v ceo v ebo h fe * v ce(sat) f t c ob conditions v cb = C10v, i e = 0 v ce = C10v, i b = 0 i c = C10 m a, i e = 0 i c = C2ma, i b = 0 i e = C10 m a, i c = 0 v ce = C10v, i c = C2ma i c = C50ma, i b = C5ma v cb = C10v, i e = 1ma, f = 200mhz v cb = C10v, i e = 0, f = 1mhz min C60 C50 C7 160 typ 80 3.5 max C100 C1 460 C 0.3 unit na m a v v v v mhz pf * h fe rank classification rank q r s h fe 160 ~ 260 210 ~ 340 290 ~ 460 free datasheet http:///
2 transistor 2sA1309A 0 160 40 120 80 140 20 100 60 50 500 450 400 350 300 200 250 150 100 ambient temperature ta ( ?c ) collector power dissipation p c ( mw ) 0 ?2 ?0 ? ? ? ? 0 120 100 80 60 40 20 ta=25?c ?50 m a ?00 m a ?50 m a ?00 m a ?0 m a i b =?00 m a collector to emitter voltage v ce ( v ) collector current i c ( ma ) 0 ?.0 ?.6 ?0.4 ?.2 ?0.8 0 ?40 ?00 ?60 ?20 ?0 ?0 v ce =?v ta=75?c ?5?c 25?c base to emitter voltage v be ( v ) collector current i c ( ma ) ? ?0 ?00 ?000 ? ?0 ?00 ?0.001 ?0.003 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 i c /i b =10 ta=75?c 25?c ?5?c collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) ? ?0 ?00 ?000 ? ?0 ?00 0 600 500 400 300 200 100 v ce =?v ta=75?c 25?c ?5?c collector current i c ( ma ) forward current transfer ratio h fe ?0.1 1 ?0 ?00 ?0.3 3 ?0 0 160 120 40 100 140 80 20 60 v cb =?0v ta=25?c emitter current i e ( ma ) transition frequency f t ( mhz ) ? ? ?0 ?0 ?00 0 10 8 6 4 2 9 7 5 3 1 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) p c ta i c v ce i c v be v ce(sat) i c h fe i c f t i e c ob v cb
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